Products

ResistStripCenter ™

The Resist Strip Center has the smallest footprint and the best cost of ownership of any process equipment. The Resist Strip Center removes the photoresist of most layers, including the very stubborn heavy dose implanted wafers (Arsenic or Phosphorus at > 1015 atoms/cm2) using ozone-based technology.

The patented sub ambient temperature based ozone strip, which we call ColdstripTM, requires only oxygen and water as the raw materials to generate a highly concentrated ozonated water strip solution. The sub ambient temperature ozonated water is very effective at removing photoresist from wafers without attacking interconnects and barrier metal systems such as Ti-N. The versatility of the Resist Strip Center is that it can replace both sulfuric acid and solvent based resist strip wetstations.

The resist strip center can utilize various wafer dryers both solvent-based and air flow dryers. When the dryer is combined with Legacy's patented DryZoneTM process, the wafer surface has a final conditioning step of ozone to remove all measurable trace organic residues.

The utility requirements for the Resist Strip Center are electric power, exhaust, compressed air (clean dry air), deionized water supply and return, oxygen supply, and water drain.

Consumables for processing fifty 200mm wafers are: 0.248 gallons (938 ml) of deionized water and 3.2 cuft (90 liters) of oxygen. This is the lowest Cost of Ownership for resist strip.

The Resist Strip Center has wafer-handling automation for single wafer up to 50 wafer batch processing. It can also be supplied as a manual wafer handling system.

LOG-3ST

Ozone Generation System

A flexible design of Ozone Equipment permits the delivery of ozone gas streams to single or multiple use points or the delivery of single or multiple ozonated water streams to multiple use points.  The Ozone hardware is used in traditional batch wafer wetstations, batch wafer spray stations, and single wafer processing equipment to deliver ozone gas for in-situ chemical formation or liquid ozonated solutions to the process chambers.  Ozone generators with production ranges from 10g/hr to 500g/hr are configured on an as needed basis.

The systems are used to remove Photoresist, Organic Contamination removal in Prediffusion Cleans, and to Passivate Silicon Surfaces

Why we're the best!

Customer Success 

  • Process - Gate Oxide Cleaning
  • Equipment - LOG-3ST
  • Results - Yield Increase Range 1.7% - 12.2% 

Generation III

ColdStrip ™

The system utilizes only water and oxygen as raw materials.  It has the lowest cost of ownership of any wet resist strip process, saving over $300,000 per year per wetstation  when compared to a sulfuric:peroxide system.  The key process parameters are water temperature, ozone dispersion, and ozone concentration.  This photoresist stripping mechanism for Coldstrip™ doesn’t lift carbon resists off the wafers into solution, but digests and oxidizes the photoresist to soluble chemistries and gaseous carbon dioxide.  Particles due not build up in solution and redeposit on wafers as is customary with conventional sulfuric acid mixtures or solvent strippers